IRF730SPBF
- Mfr.Part #
- IRF730SPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 5.5A D2PAK
- Stock
- 29,309
- In Stock :
- 29,309
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 25V
- Height :
- 4.83mm
- Drain to Source Voltage (Vdss) :
- 400V
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 700pF
- Drain to Source Breakdown Voltage :
- 400V
- Turn On Delay Time :
- 10 ns
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- Power Dissipation :
- 3.1W
- Fall Time (Typ) :
- 14 ns
- Max Operating Temperature :
- 150°C
- Nominal Vgs :
- 4 V
- Weight :
- 1.437803g
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Published :
- 2016
- Drain to Source Resistance :
- 1Ohm
- Length :
- 10.67mm
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 5.5A
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On Max :
- 1 Ω
- Turn-Off Delay Time :
- 38 ns
- Number of Pins :
- 3
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Rise Time :
- 15ns
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 3.3A, 10V
- Supplier Device Package :
- D2PAK
- Packaging :
- Tube
- Width :
- 9.65mm
- Datasheets
- IRF730SPBF
N-Channel Tube 1Ohm @ 3.3A, 10V ±20V 700pF @ 25V 38nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF730SPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5.5A.With a drain-source breakdown voltage of 400V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 400V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 38 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 1Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 400V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF730SPBF Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 1Ohm
a 400V drain to source voltage (Vdss)
IRF730SPBF Applications
There are a lot of Vishay Siliconix
IRF730SPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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