IRF730S
- Mfr.Part #
- IRF730S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 5.5A D2PAK
- Stock
- 779
- In Stock :
- 779
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 400V
- Rise Time :
- 15ns
- Height :
- 4.83mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 5.5A
- Continuous Drain Current (ID) :
- 5.5A
- Published :
- 2016
- Lead Free :
- Contains Lead
- Length :
- 10.67mm
- Power Dissipation :
- 74W
- Rds On Max :
- 1 Ω
- Max Operating Temperature :
- 150°C
- Width :
- 9.65mm
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 25V
- RoHS Status :
- Non-RoHS Compliant
- Number of Channels :
- 1
- Weight :
- 1.437803g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Fall Time (Typ) :
- 14 ns
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- Drain to Source Voltage (Vdss) :
- 400V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package :
- D2PAK
- Voltage - Rated DC :
- 400V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 38 ns
- Input Capacitance :
- 700pF
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 1Ohm
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 3.3A, 10V
- Packaging :
- Tube
- Number of Pins :
- 3
- Turn On Delay Time :
- 10 ns
- Datasheets
- IRF730S
N-Channel Tube 1Ohm @ 3.3A, 10V ±20V 700pF @ 25V 38nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF730S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.This device has a drain-to-source resistance of 1Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF730S Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 1Ohm
a 400V drain to source voltage (Vdss)
IRF730S Applications
There are a lot of Vishay Siliconix
IRF730S applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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