IRF730PBF
- Mfr.Part #
- IRF730PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 5.5A TO220AB
- Stock
- 9,715
- In Stock :
- 9,715
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Current :
- 55A
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- REACH SVHC :
- Unknown
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 400V
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 1Ohm
- Rise Time :
- 15ns
- Voltage - Rated DC :
- 400V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 6.000006g
- Radiation Hardening :
- No
- Power Dissipation :
- 74W
- Recovery Time :
- 530 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Voltage :
- 400V
- Drain to Source Breakdown Voltage :
- 400V
- Power Dissipation-Max :
- 74W Tc
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Nominal Vgs :
- 4 V
- Number of Elements :
- 1
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Turn-Off Delay Time :
- 38 ns
- Current Rating :
- 5.5A
- Height :
- 9.01mm
- Continuous Drain Current (ID) :
- 5.5A
- Package / Case :
- TO-220-3
- Rds On Max :
- 1 Ω
- Input Capacitance :
- 700pF
- Supplier Device Package :
- TO-220AB
- Min Operating Temperature :
- -55°C
- Resistance :
- 1Ohm
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 3.3A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Mount :
- Through Hole
- Element Configuration :
- Single
- Threshold Voltage :
- 4V
- Turn On Delay Time :
- 10 ns
- Length :
- 10.41mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.7mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 25V
- Datasheets
- IRF730PBF
N-Channel Tube 1Ohm @ 3.3A, 10V ±20V 700pF @ 25V 38nC @ 10V 400V TO-220-3
IRF730PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 700pF @ 25V.This device conducts a continuous drain current (ID) of 5.5A, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF730PBF Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 1Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF730PBF Applications
There are a lot of Vishay Siliconix
IRF730PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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