IRF730B

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

6A

Operating Mode :

ENHANCEMENT MODE

Rise Time :

11ns

DS Breakdown Voltage-Min :

400V

Drain Current-Max (Abs) (ID) :

6A

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN OVER NICKEL

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

1 Ω @ 3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

1Ohm

Input Capacitance (Ciss) (Max) @ Vds :

311pF @ 100V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Transistor Application :

SWITCHING

Fall Time (Typ) :

8 ns

Number of Terminations :

3

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2013

Terminal Position :

Single

Turn On Delay Time :

12 ns

Power Dissipation-Max :

104W Tc

Drain to Source Voltage (Vdss) :

400V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

104 mJ

Pulsed Drain Current-Max (IDM) :

13A

Mount :

Through Hole

JESD-609 Code :

e3

Vgs (Max) :

±30V

Turn-Off Delay Time :

14 ns

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V