IRF730ASPBF
- Mfr.Part #
- IRF730ASPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 5.5A D2PAK
- Stock
- 9,549
- In Stock :
- 9,549
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 1.437803g
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Rise Time :
- 22ns
- Power Dissipation-Max :
- 74W Tc
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Turn On Delay Time :
- 10 ns
- Rds On Max :
- 1 Ω
- Number of Channels :
- 1
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Max Operating Temperature :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 25V
- Width :
- 9.65mm
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Drain to Source Breakdown Voltage :
- 400V
- Drain to Source Voltage (Vdss) :
- 400V
- Threshold Voltage :
- 4.5V
- Min Operating Temperature :
- -55°C
- REACH SVHC :
- Unknown
- Length :
- 10.67mm
- Drain to Source Resistance :
- 1Ohm
- Height :
- 4.83mm
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 3.3A, 10V
- Power Dissipation :
- 74W
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 5.5A
- Published :
- 2006
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 20 ns
- Supplier Device Package :
- D2PAK
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 16 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 600pF
- Datasheets
- IRF730ASPBF
N-Channel Tube 1Ohm @ 3.3A, 10V ±30V 600pF @ 25V 22nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF730ASPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 400V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 400V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4.5V.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF730ASPBF Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1Ohm
a threshold voltage of 4.5V
a 400V drain to source voltage (Vdss)
IRF730ASPBF Applications
There are a lot of Vishay Siliconix
IRF730ASPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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