IRF730AS
- Mfr.Part #
- IRF730AS
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 5.5A D2PAK
- Stock
- 18,197
- In Stock :
- 18,197
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 400V
- Min Operating Temperature :
- -55°C
- Width :
- 9.65mm
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- RoHS Status :
- Non-RoHS Compliant
- Length :
- 10.67mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Voltage - Rated DC :
- 400V
- Turn On Delay Time :
- 10 ns
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- D2PAK
- Input Capacitance :
- 600pF
- Lead Free :
- Contains Lead
- Continuous Drain Current (ID) :
- 5.5A
- Mount :
- Surface Mount
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Height :
- 4.83mm
- Drain to Source Resistance :
- 1Ohm
- Rise Time :
- 22ns
- Rds On Max :
- 1 Ω
- Power Dissipation-Max :
- 74W Tc
- Drain to Source Breakdown Voltage :
- 400V
- Fall Time (Typ) :
- 16 ns
- Weight :
- 1.437803g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 5.5A
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Published :
- 2016
- Number of Channels :
- 1
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 3.3A, 10V
- Turn-Off Delay Time :
- 20 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IRF730AS
N-Channel Tube 1Ohm @ 3.3A, 10V ±30V 600pF @ 25V 22nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF730AS Overview
A device's maximal input capacitance is 600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 400V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF730AS Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1Ohm
a 400V drain to source voltage (Vdss)
IRF730AS Applications
There are a lot of Vishay Siliconix
IRF730AS applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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