IRF730

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

22A

Qualification Status :

COMMERCIAL

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Power Dissipation-Max :

74W Tc

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.3A, 10V

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Drain Current-Max (Abs) (ID) :

5.5A

DS Breakdown Voltage-Min :

400V

Drain to Source Voltage (Vdss) :

400V

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

FET Type :

N-Channel

Drain-source On Resistance-Max :

1Ohm

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Transistor Application :

SWITCHING

Packaging :

Tube

Vgs (Max) :

±20V

Transistor Element Material :

SILICON