IRF730

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.3A, 10V

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

400V

Drain-source On Resistance-Max :

1Ohm

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

DS Breakdown Voltage-Min :

400V

Transistor Element Material :

SILICON

Packaging :

Tube

Power Dissipation-Max :

74W Tc

Terminal Position :

Single

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

5.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

22A

Qualification Status :

COMMERCIAL