IRF7241TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

100 ns

Turn-Off Delay Time :

210 ns

Turn On Delay Time :

24 ns

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Width :

3.9878mm

Continuous Drain Current (ID) :

-6.2A

Vgs (Max) :

±20V

JESD-609 Code :

e3

Number of Terminations :

8

Rise Time :

280ns

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Radiation Hardening :

No

Dual Supply Voltage :

-40V

Recovery Time :

48 ns

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Resistance :

41mOhm

Threshold Voltage :

-3V

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drain to Source Breakdown Voltage :

-40V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

Lead Free :

Contains Lead, Lead Free

Voltage - Rated DC :

-40V

Current Rating :

-6.2A

Mount :

Surface Mount

Nominal Vgs :

-3 V

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

40V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

1.4986mm

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

41m Ω @ 6.2A, 10V

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Length :

4.9784mm