IRF7240TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

10.5A

Current - Continuous Drain (Id) @ 25°C :

10.5A Ta

FET Type :

P-Channel

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

40V

Rds On (Max) @ Id, Vgs :

15m Ω @ 10.5A, 10V

Drain to Source Voltage (Vdss) :

40V

HTS Code :

8541.21.00.95

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G8

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.015Ohm

Additional Feature :

ULTRA LOW RESISTANCE

Published :

2012

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

9250pF @ 25V

Series :

HEXFET®

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

43A

Vgs (Max) :

±20V

JEDEC-95 Code :

MS-012AA

Number of Elements :

1