IRF7240PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.015Ohm

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

9250pF @ 25V

Factory Lead Time :

26 Weeks

Drain to Source Voltage (Vdss) :

40V

DS Breakdown Voltage-Min :

40V

Terminal Form :

Gull wing

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

43A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

10.5A

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

10.5A Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G8

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rds On (Max) @ Id, Vgs :

15m Ω @ 10.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Published :

2005

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

8

JEDEC-95 Code :

MS-012AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V