IRF7233TRPBF
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- Mfr.Part #
- IRF7233TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 9.5A 8SO
- Stock
- 9,919
- In Stock ：
- 9,919
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±12V
- Power Dissipation :
- 2.5W
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Ta
- Input Capacitance :
- 6nF
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 9.5A, 4.5V
- Continuous Drain Current (ID) :
- -9.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 10V
- Current Rating :
- -9.5A
- Published :
- 2004
- Rds On Max :
- 20 mΩ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate to Source Voltage (Vgs) :
- 12V
- Series :
- HEXFET®
- Drain to Source Resistance :
- 20mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 2.5W Ta
- REACH SVHC :
- No SVHC
- Rise Time :
- 540ns
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 12V
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- -12V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Supplier Device Package :
- 8-SO
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 5V
- Number of Elements :
- 1
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA
- Voltage - Rated DC :
- -12V
- Nominal Vgs :
- 12 V
- FET Type :
- P-Channel
- Datasheets
- IRF7233TRPBF
P-Channel Tape & Reel (TR) 20mOhm @ 9.5A, 4.5V ±12V 6000pF @ 10V 74nC @ 5V 12V 8-SOIC (0.154, 3.90mm Width)
IRF7233TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6000pF @ 10V.This device conducts a continuous drain current (ID) of -9.5A, which is the maximum continuous current transistor can conduct.Using VGS=-12V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -12V (that is, no charge flow from drain to source).When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 20mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.This transistor requires a drain-source voltage (Vdss) of 12V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
IRF7233TRPBF Features
a continuous drain current (ID) of -9.5A
a drain-to-source breakdown voltage of -12V voltage
single MOSFETs transistor is 20mOhm
a 12V drain to source voltage (Vdss)
IRF7233TRPBF Applications
There are a lot of Infineon Technologies
IRF7233TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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