IRF7233PBF
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- Mfr.Part #
- IRF7233PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 9.5A 8SO
- Stock
- 4,382
- In Stock ：
- 4,382
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- -9.5A
- Power Dissipation-Max :
- 2.5W Ta
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 77 ns
- Published :
- 2004
- Resistance :
- 20mOhm
- Current Rating :
- -9.5A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Ta
- Rds On Max :
- 20 mΩ
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -12V
- Input Capacitance :
- 6nF
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 10V
- Rise Time :
- 540ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Drain to Source Breakdown Voltage :
- -12V
- Fall Time (Typ) :
- 370 ns
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Supplier Device Package :
- 8-SO
- Power Dissipation :
- 2.5W
- Min Operating Temperature :
- -55°C
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 5V
- Gate to Source Voltage (Vgs) :
- 12V
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 9.5A, 4.5V
- Vgs (Max) :
- ±12V
- Drain to Source Resistance :
- 20mOhm
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Packaging :
- Tube
- Datasheets
- IRF7233PBF
P-Channel Tube 20mOhm @ 9.5A, 4.5V ±12V 6000pF @ 10V 74nC @ 5V 12V 8-SOIC (0.154, 3.90mm Width)
IRF7233PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6000pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -9.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -12V, and this device has a drainage-to-source breakdown voltage of -12VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 77 ns.This device has a drain-to-source resistance of 20mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 12V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
IRF7233PBF Features
a continuous drain current (ID) of -9.5A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 77 ns
single MOSFETs transistor is 20mOhm
a 12V drain to source voltage (Vdss)
IRF7233PBF Applications
There are a lot of Infineon Technologies
IRF7233PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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