IRF723
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- Mfr.Part #
- IRF723
- Manufacturer
- Harris Corporation
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 79,897
- In Stock ：
- 79,897
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- RoHS Status :
- Non-RoHS Compliant
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 9.5A, 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 5V
- Supplier Device Package :
- 8-SO
- Vgs (Max) :
- ±12V
- Published :
- 1999
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Ta
- Drain to Source Voltage (Vdss) :
- 12V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation-Max :
- 2.5W Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 10V
- Datasheets
- IRF723
P-Channel Tube 20mOhm @ 9.5A, 4.5V ±12V 6000pF @ 10V 74nC @ 5V 12V 8-SOIC (0.154, 3.90mm Width)
IRF7233 Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for the vapor phase, infrared, or wave soldering techniques.
IRF7233 Features
Ultra-Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
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