IRF7220GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Vgs (Max) :

±12V

Continuous Drain Current (ID) :

11A

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 5V

Rds On Max :

12 mΩ

Number of Elements :

1

Fall Time (Typ) :

1.04 μs

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance :

8.075nF

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

-14V

Drain to Source Voltage (Vdss) :

14V

Supplier Device Package :

8-SO

Power Dissipation-Max :

2.5W Ta

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

12mOhm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

8075pF @ 10V

FET Type :

P-Channel

Number of Pins :

8

Power Dissipation :

2.5W

Series :

HEXFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

12mOhm @ 11A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Max Operating Temperature :

150°C

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

600mV @ 250μA

Gate to Source Voltage (Vgs) :

12V

Published :

2009

RoHS Status :

RoHS Compliant

Rise Time :

420ns