IRF7220

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

14V

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 5V

Drain-source On Resistance-Max :

2.5Ohm

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

11A

Terminal Form :

THROUGH-HOLE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

3

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

600mV @ 250μA

Rds On (Max) @ Id, Vgs :

12m Ω @ 11A, 4.5V

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

2.8A

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Published :

1999

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

DS Breakdown Voltage-Min :

400V

Input Capacitance (Ciss) (Max) @ Vds :

8075pF @ 10V