IRF7210TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

3μs

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

RoHS Status :

RoHS Compliant

Input Capacitance :

17.179nF

Number of Pins :

8

Rds On Max :

7 mΩ

Mounting Type :

Surface Mount

Power Dissipation :

2.5W

Input Capacitance (Ciss) (Max) @ Vds :

17179pF @ 10V

Max Operating Temperature :

150°C

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Power Dissipation-Max :

2.5W Ta

Turn On Delay Time :

50 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Supplier Device Package :

8-SO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Width :

3.9878mm

Gate Charge (Qg) (Max) @ Vgs :

212nC @ 5V

Vgs(th) (Max) @ Id :

600mV @ 500μA

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Radiation Hardening :

No

Fall Time (Typ) :

30 µs

Drain to Source Resistance :

7mOhm

Height :

1.4986mm

Rds On (Max) @ Id, Vgs :

7mOhm @ 16A, 4.5V

Turn-Off Delay Time :

6.5 ns

FET Type :

P-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

Continuous Drain Current (ID) :

16A

Series :

HEXFET®

Length :

4.9784mm

Vgs (Max) :

±12V

Published :

2005

Element Configuration :

Single

Resistance :

7mOhm

Drain to Source Breakdown Voltage :

-14V

Drain to Source Voltage (Vdss) :

12V

Number of Elements :

1