IRF720PBF
- Mfr.Part #
- IRF720PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 3.3A TO220AB
- Stock
- 61,371
- In Stock :
- 61,371
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 50W
- Width :
- 4.7mm
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 30 ns
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 9.01mm
- Voltage :
- 400V
- Rds On (Max) @ Id, Vgs :
- 1.8Ohm @ 2A, 10V
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 400V
- Supplier Device Package :
- TO-220AB
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 50W Tc
- Lead Free :
- Lead Free
- Current :
- 33A
- Nominal Vgs :
- 4 V
- Rise Time :
- 14ns
- Weight :
- 6.000006g
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 3.3A
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 410pF
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 13 ns
- Length :
- 10.41mm
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Tc
- REACH SVHC :
- Unknown
- Drain to Source Breakdown Voltage :
- 400V
- Number of Channels :
- 1
- Turn On Delay Time :
- 10 ns
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 1.8Ohm
- Drain to Source Resistance :
- 1.8Ohm
- Min Operating Temperature :
- -55°C
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 410pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 1.8 Ω
- Threshold Voltage :
- 4V
- Recovery Time :
- 600 ns
- Published :
- 1997
- Number of Elements :
- 1
- Datasheets
- IRF720PBF
N-Channel Tube 1.8Ohm @ 2A, 10V ±20V 410pF @ 25V 20nC @ 10V 400V TO-220-3
IRF720PBF Overview
A device's maximum input capacitance is 410pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.8Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF720PBF Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF720PBF Applications
There are a lot of Vishay Siliconix
IRF720PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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