IRF7207PBF
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- Mfr.Part #
- IRF7207PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 5.4A 8SO
- Stock
- 12,053
- In Stock ：
- 12,053
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 60 mΩ
- Current Rating :
- -5.4A
- Power Dissipation :
- 2.5W
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 4.5V
- Vgs (Max) :
- ±12V
- Series :
- HEXFET®
- Number of Pins :
- 8
- Fall Time (Typ) :
- 41 ns
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 12V
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- Input Capacitance :
- 780pF
- Published :
- 2004
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 5.4A, 4.5V
- Voltage - Rated DC :
- -20V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Turn-Off Delay Time :
- 43 ns
- Drain to Source Resistance :
- 60mOhm
- Rise Time :
- 24ns
- Turn On Delay Time :
- 11 ns
- Threshold Voltage :
- -700mV
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- -5.4A
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tc
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 2.5W Tc
- Drain to Source Breakdown Voltage :
- -20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 780pF @ 15V
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- 8-SO
- Drain to Source Voltage (Vdss) :
- 20V
- Datasheets
- IRF7207PBF
P-Channel Tube 60mOhm @ 5.4A, 4.5V ±12V 780pF @ 15V 22nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
IRF7207PBF Overview
The maximum input capacitance of this device is 780pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -5.4A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 43 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 60mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -700mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.7V 4.5V), this device helps reduce its power consumption.
IRF7207PBF Features
a continuous drain current (ID) of -5.4A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 43 ns
single MOSFETs transistor is 60mOhm
a threshold voltage of -700mV
a 20V drain to source voltage (Vdss)
IRF7207PBF Applications
There are a lot of Infineon Technologies
IRF7207PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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