IRF7205TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

-4.6A

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

JESD-609 Code :

e3

Length :

4.9784mm

Turn On Delay Time :

14 ns

Voltage - Rated DC :

-30V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Dual Supply Voltage :

-30V

Number of Elements :

1

Power Dissipation-Max :

2.5W Tc

Width :

3.9878mm

Nominal Vgs :

-3 V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

-30V

Threshold Voltage :

-3V

Height :

1.4986mm

Terminal Position :

Dual

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Lead Free :

Lead Free

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

70m Ω @ 4.6A, 10V

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

71 ns

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

97 ns

REACH SVHC :

No SVHC

Current Rating :

-5.3A

Terminal Finish :

Matte Tin (Sn)

Rise Time :

21ns

Power Dissipation :

2.5W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Recovery Time :

100 ns

RoHS Status :

ROHS3 Compliant

Published :

1997

Radiation Hardening :

No

Resistance :

70mOhm

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 10V

FET Type :

P-Channel

Mount :

Surface Mount

Transistor Application :

SWITCHING