IRF7204PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±12V

Drain-source On Resistance-Max :

0.06Ohm

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

21A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

DS Breakdown Voltage-Min :

20V

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 10V

Power Dissipation-Max :

2.5W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Terminal Position :

Dual

Packaging :

Tube

Series :

HEXFET®

JEDEC-95 Code :

MS-012AA

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Drain Current-Max (Abs) (ID) :

5.3A

Rds On (Max) @ Id, Vgs :

60m Ω @ 5.3A, 10V

JESD-30 Code :

R-PDSO-G8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

FET Type :

P-Channel

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED