IRF7201TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

Factory Lead Time :

12 Weeks

Height :

1.4986mm

Power Dissipation :

2.5W

Threshold Voltage :

1V

REACH SVHC :

No SVHC

Published :

2003

Length :

4.9784mm

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Fall Time (Typ) :

19 ns

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Matte Tin (Sn)

Nominal Vgs :

1 V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

JESD-609 Code :

e3

Rise Time :

35ns

Additional Feature :

ULTRA LOW RESISTANCE

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Voltage - Rated DC :

30V

Power Dissipation-Max :

2.5W Tc

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Transistor Application :

SWITCHING

Width :

3.9878mm

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Continuous Drain Current (ID) :

7A

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Resistance :

30mOhm

Avalanche Energy Rating (Eas) :

70 mJ

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Lead Free :

Contains Lead, Lead Free

Current Rating :

7.3A

Element Configuration :

Single

Terminal Position :

Dual

Number of Elements :

1

Turn-Off Delay Time :

21 ns

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.3A, 10V

Recovery Time :

73 ns

Dual Supply Voltage :

30V

Turn On Delay Time :

7 ns