IRF7201PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.03Ohm

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

58A

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

MS-012AA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Additional Feature :

High Reliability

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

Packaging :

Tube

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Number of Terminations :

8

Qualification Status :

Not Qualified

FET Type :

N-Channel

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

7.3A

Terminal Form :

Gull wing

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

70 mJ

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.3A, 10V

Power Dissipation-Max :

2.5W Tc

Transistor Application :

SWITCHING