IRF6723M2DTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

71 mJ

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Length :

6.35mm

JESD-30 Code :

R-XBCC-N4

RoHS Status :

RoHS Compliant

Number of Elements :

2

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Drain Current-Max (Abs) (ID) :

47A

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 15V

Published :

2009

Package / Case :

DirectFET™ Isometric MA

Turn-Off Delay Time :

15 ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

15A

Max Power Dissipation :

2.7W

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 15A, 10V

Number of Terminations :

4

Rise Time :

41ns

Turn On Delay Time :

14 ns

FET Feature :

Logic Level Gate

Terminal Finish :

TIN SILVER COPPER

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Base Part Number :

IRF6723M2DPBF

Fall Time (Typ) :

20 ns

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Case Connection :

DRAIN

Power Dissipation :

2.7W

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Width :

5.05mm

Drain-source On Resistance-Max :

0.0066Ohm

JESD-609 Code :

e1

Height :

596μm