IRF6723M2DTR1P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation-Max (Abs) :

25W

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

47A

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Published :

2009

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Surface Mount :

yes

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

15A

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 15A, 10V

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Power - Max :

2.7W

Package / Case :

DirectFET™ Isometric MA

RoHS Status :

RoHS Compliant

Base Part Number :

IRF6723M2DPBF

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 15V