IRF640NSTRRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

150m Ω @ 11A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 25V

Case Connection :

DRAIN

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Published :

2004

Avalanche Energy Rating (Eas) :

247 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

72A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

200V

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.15Ohm

Power Dissipation-Max :

150W Tc

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

18A

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

200V

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

FET Type :

N-Channel

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99