IRF6150

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

36m Ω @ 7.9A, 4.5V

Series :

HEXFET®

Surface Mount :

No

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

3Ohm

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

3W

Drain Current-Max (Abs) (ID) :

2.2A

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Form :

THROUGH-HOLE

Configuration :

Single

DS Breakdown Voltage-Min :

250V

Number of Terminations :

3

Base Part Number :

IRF6150

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 P-Channel (Dual)

JESD-609 Code :

e3

Published :

2004

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

7.9A

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

8.8A

Package / Case :

16-WFBGA

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Qualification Status :

Not Qualified