IPU60R950C6BKMA1
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- Mfr.Part #
- IPU60R950C6BKMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.4A TO251-3
- Stock
- 1,309
- In Stock ：
- 1,309
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 60 ns
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 46 mJ
- Width :
- 2.41mm
- Gate Charge (Qg) (Max) @ Vgs :
- 1.5nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 100V
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.95Ohm
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 37W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Fall Time (Typ) :
- 13 ns
- Vgs(th) (Max) @ Id :
- 3.5V @ 130μA
- Continuous Drain Current (ID) :
- 4.4A
- Rise Time :
- 8ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Length :
- 6.73mm
- Power Dissipation-Max :
- 37W Tc
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Contains Lead
- Halogen Free :
- Halogen Free
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Drain to Source Breakdown Voltage :
- 650V
- Transistor Application :
- SWITCHING
- Published :
- 2012
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Packaging :
- Tube
- Turn On Delay Time :
- 10 ns
- Series :
- CoolMOS™
- Max Dual Supply Voltage :
- 600V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 1.5A, 10V
- Height :
- 6.22mm
- Datasheets
- IPU60R950C6BKMA1
N-Channel Tube 950m Ω @ 1.5A, 10V ±20V 280pF @ 100V 1.5nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IPU60R950C6BKMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 46 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 280pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 600V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPU60R950C6BKMA1 Features
the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 60 ns
IPU60R950C6BKMA1 Applications
There are a lot of Infineon Technologies
IPU60R950C6BKMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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