IPU60R1K5CEBKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-30 Code :

R-PSIP-T3

Weight :

343.085929mg

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Pulsed Drain Current-Max (IDM) :

8A

Published :

2015

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Turn-Off Delay Time :

40 ns

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Packaging :

Tube

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Elements :

1

FET Type :

N-Channel

Turn On Delay Time :

8 ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.1A, 10V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

600V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-40°C~150°C TJ

Element Configuration :

Single

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 100V

Avalanche Energy Rating (Eas) :

26 mJ

Power Dissipation-Max :

28W Tc

Drain Current-Max (Abs) (ID) :

5A

Rise Time :

7ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

20 ns

Number of Channels :

1

Continuous Drain Current (ID) :

3.1A

Series :

CoolMOS™ CE

Vgs (Max) :

±20V