IPU60R1K5CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

8A

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 100V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Avalanche Energy Rating (Eas) :

26 mJ

Number of Elements :

1

Number of Terminations :

3

Power Dissipation-Max (Abs) :

49W

Pbfree Code :

yes

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

5A

Terminal Position :

Single

Transistor Application :

SWITCHING

Packaging :

Tube

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.1A, 10V

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Operating Temperature :

-40°C~150°C TJ

Series :

CoolMOS™ CE

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Surface Mount :

No

Published :

2015

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Factory Lead Time :

6 Weeks

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Case Connection :

DRAIN