IPU60R1K0CEAKMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Continuous Drain Current (ID) :

4.3A

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Position :

Single

Factory Lead Time :

18 Weeks

Packaging :

Tube

Power Dissipation-Max :

61W Tc

Published :

2008

Vgs (Max) :

±20V

Operating Temperature :

-40°C~150°C TJ

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Rds On (Max) @ Id, Vgs :

1 Ω @ 1.5A, 10V

Avalanche Energy Rating (Eas) :

46 mJ

Pbfree Code :

yes

Drain-source On Resistance-Max :

1Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

12A

Reach Compliance Code :

not_compliant

Number of Elements :

1

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Dual Supply Voltage :

600V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Lead Free :

Contains Lead

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 100V

Series :

CoolMOS™ CE