IPU60R2K1CEBKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

11 mJ

Power Dissipation-Max :

22W Tc

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Surface Mount :

No

Series :

CoolMOS™ CE

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Vgs(th) (Max) @ Id :

3.5V @ 60μA

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Compliant

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 760mA, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

DRAIN

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

6A

JESD-30 Code :

R-PSIP-T3

DS Breakdown Voltage-Min :

600V

Number of Elements :

1

Mounting Type :

Through Hole

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Published :

2015