IPU60R1K0CEBKMA1
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- Mfr.Part #
- IPU60R1K0CEBKMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.3A TO251
- Stock
- 7,102
- In Stock ：
- 7,102
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 8ns
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 46 mJ
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 37W Tc
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Series :
- CoolMOS™ CE
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Number of Channels :
- 1
- Fall Time (Typ) :
- 13 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 600V
- Mount :
- Through Hole
- Turn On Delay Time :
- 10 ns
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 100V
- Turn-Off Delay Time :
- 60 ns
- DS Breakdown Voltage-Min :
- 600V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Weight :
- 343.085929mg
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 1Ohm
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 1.5A, 10V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Number of Elements :
- 1
- Published :
- 2015
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Tc
- Continuous Drain Current (ID) :
- 4.3A
- Vgs(th) (Max) @ Id :
- 3.5V @ 130μA
- Datasheets
- IPU60R1K0CEBKMA1
N-Channel Tube 1 Ω @ 1.5A, 10V ±20V 280pF @ 100V 13nC @ 10V 600V TO-251-3 Short Leads, IPak, TO-251AA
IPU60R1K0CEBKMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 46 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 280pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.3A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPU60R1K0CEBKMA1 Features
the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 4.3A
the turn-off delay time is 60 ns
a 600V drain to source voltage (Vdss)
IPU60R1K0CEBKMA1 Applications
There are a lot of Infineon Technologies
IPU60R1K0CEBKMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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