IPU60R950C6AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

ECCN Code :

EAR99

Series :

CoolMOS™ C6

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Drain-source On Resistance-Max :

0.95Ohm

Power Dissipation-Max :

37W Tc

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Avalanche Energy Rating (Eas) :

46 mJ

Pulsed Drain Current-Max (IDM) :

12A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Factory Lead Time :

12 Weeks

Terminal Position :

Single

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

JESD-609 Code :

e3

Number of Terminations :

3

Pbfree Code :

yes

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 100V

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V