IPU60R600C6BKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Turn-Off Delay Time :

80 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

600V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

12 ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Element Configuration :

Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Height :

6.22mm

Drain to Source Breakdown Voltage :

650V

Number of Elements :

1

Transistor Application :

SWITCHING

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Fall Time (Typ) :

13 ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Power Dissipation-Max :

63W Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

Continuous Drain Current (ID) :

7.3A

FET Type :

N-Channel

Length :

6.73mm

Published :

2012

Pbfree Code :

No

Series :

CoolMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

63W

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Width :

2.41mm

Rise Time :

9ns

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Drain-source On Resistance-Max :

0.6Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED