IPU60R600C6AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.6Ohm

JESD-609 Code :

e3

Pbfree Code :

yes

Surface Mount :

No

Number of Elements :

1

Power Dissipation-Max :

63W Tc

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

JESD-30 Code :

R-PSIP-T3

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Number of Terminations :

3

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

19A

DS Breakdown Voltage-Min :

600V

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

FET Type :

N-Channel

Mounting Type :

Through Hole

Terminal Position :

Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Series :

CoolMOS™ C6

Avalanche Energy Rating (Eas) :

133 mJ

Published :

2008