IPP50R190CE
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- Mfr.Part #
- IPP50R190CE
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 5
- Stock
- 11,309
- In Stock ：
- 11,309
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 47.2nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 18.5A Tc
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 3.5V @ 510μA
- Pin Count :
- 3
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Published :
- 2008
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 6.2A, 13V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 9.5 ns
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 54 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 8.5ns
- Pbfree Code :
- yes
- Halogen Free :
- Halogen Free
- Max Dual Supply Voltage :
- 500V
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 18.5A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1137pF @ 100V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 7.5 ns
- Power Dissipation-Max :
- 127W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 13V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 127W
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.19Ohm
- Drain to Source Breakdown Voltage :
- 550V
- Factory Lead Time :
- 18 Weeks
- JEDEC-95 Code :
- TO-220AB
- Series :
- CoolMOS™ CE
- Datasheets
- IPP50R190CE
N-Channel Tube 190m Ω @ 6.2A, 13V ±20V 1137pF @ 100V 47.2nC @ 10V TO-220-3
IPP50R190CEXKSA1 Overview
A device's maximal input capacitance is 1137pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 550V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 54 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 500V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (13V).
IPP50R190CEXKSA1 Features
a continuous drain current (ID) of 18.5A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 54 ns
IPP50R190CEXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R190CEXKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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