IPP50R190CEXKSA1
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- Mfr.Part #
- IPP50R190CEXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IPP50R190 - 500V, 0.19OHM, N-CHA
- Stock
- 169
- In Stock ：
- 169
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 47.2nC @ 10V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Packaging :
- Tube
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 7.5 ns
- Rise Time :
- 8.5ns
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 18.5A Tc
- Power Dissipation-Max :
- 127W Tc
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 6.2A, 13V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 3.5V @ 510μA
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Lead Free :
- Lead Free
- Published :
- 2008
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 54 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 13V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Max Dual Supply Voltage :
- 500V
- Power Dissipation :
- 127W
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 18.5A
- Factory Lead Time :
- 18 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1137pF @ 100V
- Turn On Delay Time :
- 9.5 ns
- Drain to Source Breakdown Voltage :
- 550V
- Drain-source On Resistance-Max :
- 0.19Ohm
- Series :
- CoolMOS™ CE
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IPP50R190CEXKSA1
N-Channel Tube 190m Ω @ 6.2A, 13V ±20V 1137pF @ 100V 47.2nC @ 10V TO-220-3
IPP50R190CEXKSA1 Overview
A device's maximal input capacitance is 1137pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 550V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 54 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 500V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (13V).
IPP50R190CEXKSA1 Features
a continuous drain current (ID) of 18.5A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 54 ns
IPP50R190CEXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R190CEXKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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