IPP50R199CPHKSA1
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- Mfr.Part #
- IPP50R199CPHKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 17A TO220-3
- Stock
- 27,476
- In Stock ：
- 27,476
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Series :
- CoolMOS™
- Vgs(th) (Max) @ Id :
- 3.5V @ 660µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 100V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 139W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 199mOhm @ 9.9A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Package / Case :
- TO-220-3
- Supplier Device Package :
- PG-TO220-3-1
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 550V
- Published :
- 2007
- Datasheets
- IPP50R199CPHKSA1
N-Channel Tube 199mOhm @ 9.9A, 10V ±20V 1800pF @ 100V 45nC @ 10V 550V TO-220-3
IPP50R199CPHKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1800pF @ 100V.Operating this transistor requires a 550V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPP50R199CPHKSA1 Features
a 550V drain to source voltage (Vdss)
IPP50R199CPHKSA1 Applications
There are a lot of Infineon Technologies
IPP50R199CPHKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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