IPP50R199CPXK
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- Mfr.Part #
- IPP50R199CPXK
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 217
- In Stock ：
- 217
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 10 ns
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Turn-Off Delay Time :
- 80 ns
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.199Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Rise Time :
- 14ns
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Halogen Free :
- Halogen Free
- Number of Elements :
- 1
- Turn On Delay Time :
- 35 ns
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 3V
- Case Connection :
- Isolated
- Published :
- 2008
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Number of Terminations :
- 3
- Power Dissipation :
- 139W
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3.5V @ 660µA
- Factory Lead Time :
- 12 Weeks
- Drain to Source Voltage (Vdss) :
- 550V
- Continuous Drain Current (ID) :
- 17A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 100V
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 40A
- Series :
- CoolMOS™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 199m Ω @ 9.9A, 10V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 139W Tc
- Datasheets
- IPP50R199CPXK
N-Channel Tube 199m Ω @ 9.9A, 10V ±20V 1800pF @ 100V 45nC @ 10V 550V TO-220-3
IPP50R199CPXKSA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1800pF @ 100V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 40A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 550V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP50R199CPXKSA1 Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 40A.
a threshold voltage of 3V
a 550V drain to source voltage (Vdss)
IPP50R199CPXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R199CPXKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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