IPP50CN10NGHKSA1
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- Mfr.Part #
- IPP50CN10NGHKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 21,241
- In Stock ：
- 21,241
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1090 pF @ 50 V
- Package / Case :
- TO-220-3
- Series :
- CoolMOS™
- Technology :
- MOSFET (Metal Oxide)
- Package :
- Bulk
- Supplier Device Package :
- PG-TO220-3
- FET Feature :
- -
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 44W (Tc)
- Rds On (Max) @ Id, Vgs :
- 50mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs :
- 16 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss) :
- 100 V
- Current - Continuous Drain (Id) @ 25°C :
- 20A (Tc)
- Product Status :
- Active
- Datasheets
- IPP50CN10NGHKSA1
MOSFET (Metal Oxide) N-Channel 50mOhm @ 20A, 10V ±20V 1090 pF @ 50 V 16 nC @ 10 V 100 V TO-220-3
IPP50CN10NGHKSA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1090 pF @ 50 V.The transistor must receive a 100 V drain to source voltage (Vdss) in order to function.
IPP50CN10NGHKSA1 Features
a 100 V drain to source voltage (Vdss)
IPP50CN10NGHKSA1 Applications
There are a lot of Infineon
IPP50CN10NGHKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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