IPP50R250CPXKSA1
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- Mfr.Part #
- IPP50R250CPXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220
- Datasheet
- Download
- Description
- LOW POWER_LEGACY
- Stock
- 4,310
- In Stock ：
- 4,310
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Pin Count :
- 3
- Number of Elements :
- 1
- Max Power Dissipation :
- 114W
- Case Connection :
- Isolated
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Package / Case :
- TO-220
- Rds On Max :
- 250 mΩ
- Terminal Finish :
- Tin (Sn)
- Input Capacitance :
- 1.42nF
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- Power Dissipation :
- 114W
- Width :
- 4.57mm
- Height :
- 15.95mm
- Drain to Source Resistance :
- 250mOhm
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 11 ns
- Transistor Application :
- SWITCHING
- Published :
- 2008
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 500V
- Length :
- 10.36mm
- Turn-Off Delay Time :
- 80 ns
- Drain to Source Breakdown Voltage :
- 500V
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Halogen Free :
- Halogen Free
- Continuous Drain Current (ID) :
- 13A
- Rise Time :
- 14ns
- Turn On Delay Time :
- 35 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 40 Weeks
- Datasheets
- IPP50R250CPXKSA1
500V TO-220
IPP50R250CPXKSA1 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 250mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 500V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.
IPP50R250CPXKSA1 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
single MOSFETs transistor is 250mOhm
a 500V drain to source voltage (Vdss)
IPP50R250CPXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R250CPXKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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