IPI47N10SL26AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.04Ohm

Mounting Type :

Through Hole

Number of Pins :

3

Halogen Free :

Halogen Free

Published :

2001

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

400 mJ

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Continuous Drain Current (ID) :

47A

Vgs(th) (Max) @ Id :

2V @ 2mA

Number of Elements :

1

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

FET Type :

N-Channel

Max Dual Supply Voltage :

100V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Terminal Finish :

Tin (Sn)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

175W Tc

Rds On (Max) @ Id, Vgs :

26m Ω @ 33A, 10V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

188A

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Series :

SIPMOS®