IPI45N06S4-09AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Weight :

2.387001g

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 34µA

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

71W Tc

Number of Pins :

3

Turn-Off Delay Time :

20 ns

Vgs (Max) :

±20V

JESD-609 Code :

e3

Series :

Automotive, AEC-Q101, OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Terminal Position :

Single

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

3785pF @ 25V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Published :

2009

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 45A, 10V

Rise Time :

40ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0094Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

45A

Turn On Delay Time :

15 ns

Fall Time (Typ) :

5 ns

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Avalanche Energy Rating (Eas) :

97 mJ