IPI45N06S409AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Element Material :

SILICON

Power Dissipation-Max :

71W Tc

Series :

OptiMOS™

Packaging :

Tube

Drain-source On Resistance-Max :

0.0094Ohm

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

45A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

60V

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

97 mJ

Terminal Position :

Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 34µA

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 45A, 10V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Published :

2009

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

180A

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3785pF @ 25V