IPI45N06S3L-13

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSIP-T3

Lead Free :

Lead Free

Published :

2007

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Fall Time (Typ) :

124 ns

Avalanche Energy Rating (Eas) :

95 mJ

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

RoHS Status :

RoHS Compliant

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Pin Count :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs(th) (Max) @ Id :

2.2V @ 30μA

Mount :

Through Hole

Rise Time :

46ns

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

45A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

13.4m Ω @ 26A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

65W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Number of Terminations :

3

Transistor Element Material :

SILICON

Voltage - Rated DC :

55V

Gate to Source Voltage (Vgs) :

16V

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

55V

Continuous Drain Current (ID) :

45A

Mounting Type :

Through Hole

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Power Dissipation :

65W

Turn-Off Delay Time :

58 ns

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±16V