IPI45N06S3-16

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 30μA

Packaging :

Tube

Power Dissipation-Max :

65W Tc

Series :

OptiMOS™

Published :

2007

Lead Free :

Lead Free

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Number of Terminations :

3

JESD-609 Code :

e3

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

15.7m Ω @ 23A, 10V

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Turn-Off Delay Time :

26 ns

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Current Rating :

45A

Drain to Source Breakdown Voltage :

55V

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

95 mJ

ECCN Code :

EAR99

Voltage - Rated DC :

55V

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

45A

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Power Dissipation :

65W

Peak Reflow Temperature (Cel) :

260

Rise Time :

61ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

68 ns

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V