IPI45N06S409AKSA2
- Mfr.Part #
- IPI45N06S409AKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 45A TO262-3
- Stock
- 67,516
- In Stock :
- 67,516
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 2.387001g
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs(th) (Max) @ Id :
- 4V @ 34µA
- Number of Channels :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 40ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2009
- Rds On (Max) @ Id, Vgs :
- 9.4m Ω @ 45A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Turn-Off Delay Time :
- 20 ns
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.0094Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- JESD-609 Code :
- e3
- Factory Lead Time :
- 16 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 45A
- Power Dissipation-Max :
- 71W Tc
- Number of Terminations :
- 3
- Max Dual Supply Voltage :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3785pF @ 25V
- Avalanche Energy Rating (Eas) :
- 97 mJ
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Datasheets
- IPI45N06S409AKSA2

N-Channel Tube 9.4m Ω @ 45A, 10V ±20V 3785pF @ 25V 47nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI45N06S409AKSA2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 97 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3785pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 45A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 60V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPI45N06S409AKSA2 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 45A
the turn-off delay time is 20 ns
IPI45N06S409AKSA2 Applications
There are a lot of Infineon Technologies
IPI45N06S409AKSA2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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