IPI45P03P4L11AKSA1
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- Mfr.Part #
- IPI45P03P4L11AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 45A TO262-3
- Stock
- 2,680
- In Stock ：
- 2,680
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- OptiMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2008
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 11.1m Ω @ 45A, 10V
- Max Dual Supply Voltage :
- -30V
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 85µA
- Power Dissipation-Max :
- 58W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 180A
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 3ns
- Drain-source On Resistance-Max :
- 0.0111Ohm
- Vgs (Max) :
- +5V, -16V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Packaging :
- Tube
- Mount :
- Through Hole
- Number of Pins :
- 3
- Fall Time (Typ) :
- 14 ns
- Gate to Source Voltage (Vgs) :
- 5V
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 110 mJ
- Turn-Off Delay Time :
- 45 ns
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 7 ns
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Lead Free :
- Contains Lead
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 3770pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 45A
- Halogen Free :
- Halogen Free
- Datasheets
- IPI45P03P4L11AKSA1
P-Channel Tube 11.1m Ω @ 45A, 10V +5V, -16V 3770pF @ 25V 55nC @ 10V 30V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI45P03P4L11AKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 110 mJ.The maximum input capacitance of this device is 3770pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 45A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 45 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 180A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its -30V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IPI45P03P4L11AKSA1 Features
the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 45A
the turn-off delay time is 45 ns
based on its rated peak drain current 180A.
a 30V drain to source voltage (Vdss)
IPI45P03P4L11AKSA1 Applications
There are a lot of Infineon Technologies
IPI45P03P4L11AKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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