IPD78CN10NGBUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Vgs(th) (Max) @ Id :

4V @ 12µA

RoHS Status :

RoHS Compliant

Number of Terminations :

2

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

52A

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

78m Ω @ 13A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

31W Tc

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

17 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

No

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

716pF @ 50V

Number of Elements :

1

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

13A

Case Connection :

DRAIN

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.078Ohm

Published :

2013